Réunion de projet TSAR (FET OPEN)

With the end of Moore’s law in sight, new schemes must be devised to achieve energy efficient, high density and high-speed data storage and processing. One emerging concept in today’s condensed-matter physics that may fuel next-generation information technology is topology. Topological phenomena in real space can lead to interesting objects (for instance magnetic skyrmions), which are topologically protected, i.e. endowed with an energy barrier associated with a change in their topology class. These solitonic objects have been found mainly in magnetic materials like ferromagnets and there are very recent reports that ferroelectrics may also be able to host them. Interestingly, antiferroic orders like antiferromagnetism or antiferroelectricity would provide extra properties e.g. a faster control or an increased robustness. In TSAR, we will design antiferroic materials, mainly oxides, and systems where spin and electric dipole textures will be nucleated. We will devise approaches to control these topological solitons using different stimuli, and in particular ultra-fast vortex light pulses carrying angular orbital momentum. Gathering a consortium with broad expertise comprising academic (experimental and theoretical groups) and industrial partners, strategies will be devised and applied from high quality materials to devices. The targeted breakthrough of our project is to realize the first proof-of-concept for agile, low-power, room-temperature spintronic and electronic devices based on antiferroic topological materials. High speed and low-power consumption will tackle present societal challenges. Success in these endeavors will establish topological antiferroic systems as a novel versatile platform for future nanoelectronics.

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